Position-sensitive detectors based on carrier drift using a CdTe semiconductor

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 521, Issue 2-3, 2004, Pages 416-422

  Nishizawa, H ^a   Nishiura, R ^a   Takashima, K ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Cadmium telluride; Carrier trapping; Drift detector; Gamma ray imaging; Position sensitive detector

Indexed keywords

AMPLIFIERS (ELECTRONIC); COMPUTER SIMULATION; COST EFFECTIVENESS; GAMMA RADIOGRAPHY; MONTE CARLO METHODS; OPTICAL COLLIMATORS; PHOTONS; RADIOACTIVE MATERIALS; SEMICONDUCTOR MATERIALS;

CADMIUM TELLURIDE; CARRIER TRAPPING; DRIFT DETECTORS; GAMMA RAY IMAGING; POSITRON-SENSITIVE DETECTORS;

CADMIUM COMPOUNDS;

EID: 1642400108     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.10.112     Document Type: Article

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