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Volumn 101, Issue 1-3, 2003, Pages 174-180
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Glancing angle EXAFS of encapsulated self-assembled InAs/InP quantum wires and InAs/GaAs quantum dots
a,e b a c d d e b
e
CEA GRENOBLE
(France)
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Author keywords
InAs; Quantum dots; Quantum wires; Semiconductor nanostructures
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Indexed keywords
ABSORPTION SPECTROSCOPY;
ELASTICITY;
NANOSTRUCTURED MATERIALS;
OPTOELECTRONIC DEVICES;
SCATTERING;
SELF ASSEMBLY;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM DOTS;
SIGNAL TO NOISE RATIO;
X RAY SPECTROSCOPY;
SEMICONDUCTOR NANOSTRUCTURES;
X-RAY ABSORPTION SPECTROSCOPY;
SEMICONDUCTOR QUANTUM WIRES;
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EID: 1642382730
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(02)00708-0 Document Type: Conference Paper |
Times cited : (8)
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References (14)
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