Thermoelectric properties of boron compound-doped α-SiC ceramics

Journal of the Ceramic Society of Japan

Volumn 112, Issue 1302, 2004, Pages 88-94

  Pai, Chul Hoon ^a  

^a SolarLight Ltd   (South Korea)

Author keywords

B, B4C; BN; Electrical conductivity; Figure of merit; P type; Seebeck coefficient; Thermal conductivity; SiC

Indexed keywords

ADDITIVES; DENSITY (SPECIFIC GRAVITY); DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; LATTICE CONSTANTS; PHASE TRANSITIONS; SCANNING ELECTRON MICROSCOPY; SEEBECK EFFECT; SILICON CARBIDE; SINTERING; THERMAL CONDUCTIVITY OF SOLIDS; X RAY DIFFRACTION ANALYSIS;

FIGURE OF MERIT; LATTICE PARAMETER MEASUREMENTS; RELATIVE DENSITY; SINTERING ATMOSPHERE; THERMOELECTRIC PROPERTIES;

BORON COMPOUNDS;

EID: 1642376418     PISSN: 09145400     EISSN: None     Source Type: Journal    
DOI: 10.2109/jcersj.112.88     Document Type: Article

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