Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)

Materials Science and Engineering: B

Volumn 88, Issue 2-3, 2002, Pages 230-233

  Reuter, D ^a   Schafmeister, P ^a   Koch, J ^a   Schmidt, K ^a   Wieck, A D ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

Focussed ion beam implantation; InAs; Photoluminescence; Quantum dots

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRIC RESISTANCE; IN SITU PROCESSING; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; ULTRAHIGH VACUUM;

FOCUSED ION BEAM (FIB) IMPLANTATION; INAS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 1642309730     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00871-6     Document Type: Conference Paper

References (9)

1. Goldstein L., Glas F., Marzin J.Y., Charasse M.N., Le Roux G. Appl. Phys. Lett. 47:1985;1099.
2. Leonard D., Krishnamurthy M., Reaves C.M., DenBaars S.P., Petroff P.M. Appl. Phys. Lett. 63:1993;3203.
3. Marzin J.Y., Gérard J.M., Izraël A., Barrier D., Bastard G. Phys. Rev. Lett. 73:1994;716.
4. Petroff P.M., Schmidt K.H., Medeiros-Ribeiro G., Lorke A., Kotthaus J. Jpn. J. Appl. Phys. 36:1997;4068.
5. Khorenko V.V., Malzer S., Bock C., Schmidt K.H., Döhler G.H. Phys. Status Solidi. 224:2001;129.
6. Fricke M., Lorke A., Kotthaus J.P., Medeiros-Ribeiro G., Petroff P.M. Europhys. Lett. 36:1996;197.
7. Zrenner A., Findeis F., Beham E., Markmann M., Bohm G., Abstreiter G. Physica A. 9:2001;114.
8. Itskevich E., Stodardt S.T., Rybchenko S.I., Tartakovskii I.I., Eaves L., Main P.C., Henini M., Parnell S. Phys. Status Solidi. 178:2000;307.
9. Litmark U., Ziegler J.F. Phys. Rev. A. 23:1981;64.