High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications

Journal of Applied Physics

Volumn 95, Issue 5, 2004, Pages 2809-2815

  Ginige, R ^a   Cherkaoui, K ^a   Kwan, V Wong ^a   Kelleher, C ^a   Corbett, B ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; HETEROJUNCTIONS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

CONDUCTION BANDS; DIFFUSION CURRENTS; QUASI-FERMI LEVELS (QFL);

SEMICONDUCTOR DIODES;

EID: 1642307924     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1644905     Document Type: Article

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