Carrier density and confined polaron effects in the photoluminescence of fresh and oxidized porous silicon

Surface and Interface Analysis

Volumn 36, Issue 2, 2004, Pages 166-171

  Zou, Bingsuo ^a   Dai, Jiahua ^a   Xie, Sishen ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Infrared spectra; Photoluminescence; Porous silicon; Temperature dependence of emission

Indexed keywords

AGING OF MATERIALS; CARRIER CONCENTRATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PHOTOLUMINESCENCE; POLARONS; SILICON WAFERS; SURFACE TREATMENT; TEMPERATURE;

POLARON EFFECTS; QUANTUM CONFINEMENT EFFECT; SURFACE OXIDATION;

POROUS SILICON;

EID: 1642294792     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1667     Document Type: Article

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