Molecular Dynamics Simulation for Nanohardness Experiments Based on Single Crystal Silicon Substrate

Key Engineering Materials

Volumn 258-259, Issue , 2004, Pages 180-185

  Yao, Y X ^a   Zhu, Y ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Computer simulation; Molecular dynamics; Nanohardness; Residual stress

Indexed keywords

ABRASION; COMPRESSIVE STRESS; COMPUTER SIMULATION; INDENTATION; MATHEMATICAL MODELS; MECHANICAL ENGINEERING; MICROHARDNESS; MOLECULAR DYNAMICS; QUANTUM THEORY; RESIDUAL STRESSES; SILICON; TENSILE STRESS; THIN FILMS; NANOHARDNESS; SINGLE CRYSTALS;

NANOHARDNESS; NEWTONIAN MECHANICS; HARDNESS MEASUREMENT; INDENTATION SIZE EFFECT; SINGLE CRYSTAL SILICON;

SINGLE CRYSTALS; MOLECULAR DYNAMICS;

EID: 1642292645     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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