SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages

Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa

(5) Harmer, P a Halsall, M P a Wolverson, D b Parbrook, P J c Henley, S J d,e

a UNIVERSITY OF MANCHESTER (United Kingdom)

b University of Bath (United Kingdom)

c Engineering and Physical Sciences Research Council UK (United Kingdom)

d UNIVERSITY OF BRISTOL (United Kingdom)

e UNIVERSITY OF SURREY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL ALUMINUM GALLIUM NITRIDE; EXCIMER LASER BASED LIFT-OFF TECHNIQUE; PRESSURE-DEPENDENT PHOTOLUMINESCENCE;

CHEMICAL MODIFICATION; ENERGY GAP; EXCIMER LASERS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; PHASE TRANSITIONS; PHOTOLUMINESCENCE; PRESSURE EFFECTS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 1642265755 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/19/3/L04 Document Type: Letter

Times cited : (1)

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