Gain characteristics of 6 cm-long Er-doped bismuthate waveguide

Electronics Letters

Volumn 41, Issue 6, 2005, Pages 317-318

  Kondo, Y ^a   Ono, M ^a   Kageyama, J ^a   Hayashi, H ^a   Reyes, M ^a   Sugimoto, N ^a  

^a ASAHI GLASS CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; DOPING (ADDITIVES); ERBIUM; FLUORESCENCE; GLASS; OPTICAL COMMUNICATION; OPTICAL FIBERS; QUANTUM EFFICIENCY; TELECOMMUNICATION TRAFFIC; THERMAL EXPANSION; WAVELENGTH DIVISION MULTIPLEXING;

BENDING LOSS; BIDIRECTIONAL PUMPING; ER-DOPED FIBER AMPLIFIERS; POWER CONSUMPTION;

OPTICAL WAVEGUIDES;

EID: 16244423021     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20058075     Document Type: Article

References (8)

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3. 3+-doped planar waveguides', IEEE Photonics Technol. Lett., 1993, 5, (9), pp. 1014-1016
4. Shmulovich, J., et al.: 'Integrated planar waveguide amplifier with 15 dB net gain at 1550nm'. Proc. OFC'99, San Diego, CA, USA, PD42, pp. 1-3
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6. Sugimoto, N., et al.: 'Novel short-length EDF for C + L band amplification'. Proc. OAA2000, PDP3, pp. 1-3
7. 3-based EDF for short-length and broadband application pumped at 1480 nm'. Proc. OFC2001, Anaheim, CA, USA, TuI5, pp. 1-3
8. 3-based Er-doped waveguide for integrated optical amplifiers'. Proc. OFC2002, Anaheim, CA, USA, TuB4, pp. 11-12