Unusual floating body effect in fully depleted MOSFETs

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2004, Pages 151-152

  Bawedin, M ^a,b   Cristoloveanu, S ^a   Flandre, D ^b  

^a IMEP LAHC   (France)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FABRICATION; GATES (TRANSISTOR); HYSTERESIS; MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

BACK-GATE BIASING; FLOATING BODY EFFECT; GATE CURRENT; TIME DEPENDENCE;

MOSFET DEVICES;

EID: 16244401622     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. J.G. FOSSUM et al., IEEE Electron Device Letters, 16, n°12, 542-544 (1995)
2. T.POIROUX et al., IEEE Int. SOI conf., Virginia, USA (7-10 oct. 2002)
3. H.K. LIM and J.G. FOSSUM, IEEE Trans. Electron Devices, 30, p. 1244 (1983)
4. T. OUISSE et al., Solid-State Electronics, 35, n°2, 141-149 (1992)
5. S.CRISTOLOVEANU and S. LI, Kluwer Academic Publishers (1995)