A membrane planar diode for 200 GHz mixing applications

Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics

Volumn , Issue , 2004, Pages 205-206

  Rollin, J M ^a   Chance, G I ^a   Davies, S R ^a  

^a University of Bath   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITANCE; ETCHING; FINITE ELEMENT METHOD; FLIP CHIP DEVICES; IMPEDANCE MATCHING (ELECTRIC); MATHEMATICAL MODELS; MICROWAVE FILTERS; NATURAL FREQUENCIES; PLASMAS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; WAVEGUIDES;

FLIP-CHIP DIODES; PARASITIC CAPACITANCE; RF BANDWIDTHS; SUBHARMONIC MIXERS;

MIXER CIRCUITS;

EID: 16244384531     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. T. Crowe et al., "GaAs Schottky diodes for THz applications", Proc. IEEE 80, pp. 1827-1841 (1992).
2. A.R. Kerr, "Noise and loss in balanced and subharmonically pumped mixers: Part 1 - Theory", IEEE MTT-27, pp. 938-943 (1979).
3. P. Siegel et al., "Topics in the optimization of millimeter-wave mixers," NASA Technical Paper, 2287 (1984).