Design and fabrication of silcon microlens with low SAG for 528(H) × 528(V) infrared charge-coupled device application

International Journal of Infrared and Millimeter Waves

Volumn 26, Issue 1, 2005, Pages 133-146

  Ke, Caijun ^a   Yi, Xinjian ^a   Lai, Jianjun ^a,b   Chen, Sihai ^a,b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b National Laboratory for Photonics   (China)

Author keywords

Integration; Ion beam etching; IRCCD; Photoresponsivity; Silicon microlens

Indexed keywords

CHARGE COUPLED DEVICES; ETCHING; GEOMETRICAL OPTICS; IMAGE SENSORS; INFRARED DEVICES; MICROMACHINING; MONOLITHIC INTEGRATED CIRCUITS; PHOTOLITHOGRAPHY; PHOTOSENSITIVITY; SCHOTTKY BARRIER DIODES; SIGNAL PROCESSING; SILICON;

INFRARED CHARGED-COUPLED DEVICE (IRCCD); ION-BEAM-ETCHING; IRCCD; MONOLITHIC INTEGRATION; PHOTORESPONSIVITY; SILICON MICROLENS;

MICROLENSES;

EID: 16244381192     PISSN: 01959271     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10762-004-2043-4     Document Type: Article

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