Stoichiometry reversal and depth-profiling in the growth of thin oxynitride films with N2O on Si(100) surfaces

Journal of Electron Spectroscopy and Related Phenomena

Volumn 80, Issue , 1996, Pages 133-136

  Sutherland, D G J ^a,b,c   Akatsu, H ^a   Copel, M ^a   Himpsel, F J ^a   Callcott, T ^d   Carlisle, J A ^b   Ederer, D ^e   Jia, J J ^c,d   Jimenez, I ^a,b,c   Perera, R ^c   Shuh, D K ^c   Terminello, L J ^b   Tong, W M ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF TENNESSEE   (United States)

^e Tulane University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 16144367981     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/0368-2048(96)02940-4     Document Type: Article

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