Anomalous real space charge transfer through thick barriers in GaAs/AlxGa1-xAs asymmetric double quantum wells: AlxGa1-xAs as a percolating barrier

Solid State Communications

Volumn 100, Issue 4, 1996, Pages 231-235

  Kim, D S ^a   Ko, H S ^a   Kim, Y M ^a   Rhee, S J ^a   Hong, S C ^a   Yee, Y H ^a   Kim, W S ^a   Woo, J C ^a   Choi, H J ^b   Ihm, J ^b   Woo, D H ^c   Kang, K N ^c  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

A. nanostructures; B. epitaxy; D. electronic transport; E. luminescence

Indexed keywords

CHARGE TRANSFER; ELECTRIC SPACE CHARGE; EPITAXIAL GROWTH; LUMINESCENCE; NANOSTRUCTURED MATERIALS; PERCOLATION (SOLID STATE); PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES;

ASYMMETRIC DOUBLE QUANTUM WELLS; DIGITAL ALLOYS; INTERWELL EXCITONIC TRANSFER;

SEMICONDUCTOR QUANTUM WELLS;

EID: 16144366389     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00406-1     Document Type: Article

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