An empirical potential approach to dislocation formation and structural stability in GaN x As 1-x

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 182-185

  Kawamoto, Keiichi ^a   Suda, Takashi ^a   Akiyama, Toru ^a   Nakamura, Kohji ^a   Ito, Tomonori ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

Dislocation; Electrostatic energy; GaN x As 1 x; Structural stability

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LEVELS; ELECTRON MICROSCOPY; ELECTROSTATICS; SEMICONDUCTING GALLIUM COMPOUNDS; STRUCTURAL ANALYSIS; THERMAL EFFECTS; ZINC COMPOUNDS;

ELECTROSTATIC ENERGY; GANXAS1-X; STRUCTURAL STABILITY; ZINC BLENDE;

SURFACE CHEMISTRY;

EID: 15944387691     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.079     Document Type: Conference Paper

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