Understanding of crystal growth mechanisms through experimental studies of semiconductor epitaxy

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages 19-28

  Nishinaga, Tatau ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A1. Nucleation; A1. Reflection high energy electron diffraction; A3. Liquid phase epitaxy; A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Semiconductor gallium compound

Indexed keywords

DIFFUSION; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; LIQUID PHASE EPITAXY; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

INTER SURFACE DIFFUSION; MASS TRANSPORT; MICROCHANNEL EPITAXY; SELECTIVE EPITAXY;

CRYSTAL GROWTH;

EID: 15944365141     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.095     Document Type: Conference Paper

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