Epitaxial film growth of zirconium diboride on Si(0 0 1)

Journal of Crystal Growth

Volumn 277, Issue 1-4, 2005, Pages 364-371

  Roucka, R ^a   Tolle, J ^a   Chizmeshya, A V G ^a   Tsong, I S T ^a   Kouvetakis, J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

A1. Interfaces; A1. Substrates; A1. Surfaces; A3. Molecular beam epitaxy

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PYROLYSIS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); INTERFACE MORPHOLOGY; INTERFACES; LATTICE MISMATCH;

ZIRCONIUM COMPOUNDS;

EID: 15844410551     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.080     Document Type: Article

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