Growth of Ge on Si(0 0 1) studied in situ by grazing incidence small angle X-ray scattering

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Leroy, F ^a   Eymery, J ^a   Buttard, D ^a   Renaud, G ^a   Lazzari, R ^a  

^a CEA GRENOBLE   (France)

Author keywords

A1. DWBA; A1. GISAXS; A1. Nanostructures; A1. Surfaces

Indexed keywords

ANGLE MEASUREMENT; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH FROM MELT; GERMANIUM; NANOSTRUCTURED MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SCATTERING;

CRITICAL ANGLES; DWBA; GISAXS; SMALL ANGLE X-RAY SCATTERING;

SILICON;

EID: 15844399715     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.246     Document Type: Conference Paper

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