Melt entrapment during growth of crystal layer with nonplanar interface and diffusive transport of captured impurities out of layer pores

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Myasnikov, S K ^a   Uteshinsky, A D ^a  

^a KURNAKOV INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Russian Federation)

Author keywords

A1. Crystal structure; A1. Diffusion; A1. Impurities; A1. Interfaces; A1. Purification; A2. Growth from melt

Indexed keywords

BOUNDARY LAYERS; CRYSTAL STRUCTURE; DIFFUSION; IMPURITIES; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PURIFICATION; RECRYSTALLIZATION (METALLURGY); SUPERCOOLING;

CRYSTAL LAYER-MELT SYSTEM; GROWTH FROM MELT; PORES; WATER-SALT SOLUTIONS;

CRYSTAL GROWTH;

EID: 15844398266     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.129     Document Type: Conference Paper

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