Electrical properties of diamond p-i-p structures at high electric fields

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 310-313

  Yamamoto, M ^a   Watanabe, T ^a   Hamada, M ^a   Teraji, T ^a   Ito, T ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Diamond; Fowler Nordheim relation; High electric field; p i p structure

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTROLUMINESCENCE; FERMI LEVEL; MASKS; PHOTOLITHOGRAPHY;

DIAMOND GROWTH; FLOWLER-NORDHEIM RELATION; HIGH ELECTRIC FIELDS; P-I-P STRUCTURE;

DIAMONDS;

EID: 15844394504     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.136     Document Type: Conference Paper

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