Galvanostatic and potentiostatic deposition of bismuth telluride films from nitric acid solution: Effect of chemical and electrochemical parameters

Journal of Crystal Growth

Volumn 277, Issue 1-4, 2005, Pages 274-283

  Michel, S ^a   Diliberto, S ^a   Boulanger, C ^a   Stein, N ^a   Lecuire, J M ^a  

^a UNIVERSITÉ DE LORRAINE   (France)

Author keywords

A2. Electrochemical growth; B1. Bismuth compounds; B2. Semiconducting materials

Indexed keywords

ANISOTROPY; CURRENT DENSITY; DEPOSITION; DISSOLUTION; ELECTROCHEMISTRY; ELECTROLYTES; HALL EFFECT; NITRIC ACID; POTASSIUM COMPOUNDS; STAINLESS STEEL; STOICHIOMETRY; THERMAL CONDUCTIVITY; THIN FILMS;

ELECTROCHEMICAL GROWTH; GALVANOSTATIC DEPOSITION; POTENTIOSTATIC DEPOSITION; SEMICONDUCTING MATERIALS;

BISMUTH COMPOUNDS;

EID: 15844392371     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.164     Document Type: Article

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