In situ observation of solidification behavior of Si melt dropped on Si wafer by IR thermography

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Nagashio, K ^a   Murata, H ^a,b   Kuribayashi, K ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Solidification; A2. Growth from melt; B2. Semiconducting silicon

Indexed keywords

CARBON DIOXIDE; INTERFACES (MATERIALS); MELTING; MICROSTRUCTURE; QUENCHING; REACTION KINETICS; SEMICONDUCTING SILICON; SOLIDIFICATION;

DRIVING FORCE; DROPLETS; GROWTH FROM MELT; MELTING POINT;

SILICON WAFERS;

EID: 15844378039     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.230     Document Type: Conference Paper

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