Pre-power amplifier for 5.2-5.8 GHz band

2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

Volumn 2, Issue , 2002, Pages 647-650

  Kelleci, B ^a   Palamutcuoglu O ^a  

^a ISTANBUL TECHNICAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONICS; POWER AMPLIFIERS;

DIFFERENTIAL TOPOLOGY; GAIN VARIATIONS; INPUT POWER; INTERNAL MIXERS; MAXIMUM OUTPUT POWER; OUTPUT POWER; PRE-POWER AMPLIFIER; SIGE TECHNOLOGY;

AMPLIFIERS (ELECTRONIC);

EID: 15844368984     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2002.1003341     Document Type: Conference Paper

References (4)

1. Y.M. GresFisFcFe, P. ScFar, A 60-dB Gain, 55-dB Dy namic Range, 10-Gb/b Broad-Band SiGe IIBT Limiting Amplifier, IEEE Jourral of Solid-State Circuits, Vol. 31, No. 12, December 1999
2. R. Gö tzfried, F. Beissarger, S. Geraci, Debign of RF Inte grated Circuitb Ubing SiGe Bipolar Technology, IEEE Jour ral of Solid-State Circuits, Vol. 33, No.9, September 1998
3. D. Cressler, SiGe IIBT Technology: A New Contender for Si-Babed RF and Microwave Circuit Applicationb, IEEE Tarsactions or Microae TFeor3 ard Teciriques, Vol. 16, No. 5, Ma3 1998
4. Gary L. Pattor, James II. Comfort, Berrard S. Mebersor, Emmaruel F. Crabbe, Gerald B. Scilla, Edouard Dc Frésart, Jolarres M. C. Stork, Jack Y.-C. Sur, Daid L. Ilarame, Jo aclim N. Burglartz, '15-GIIz fT SiGe-Base Ileterojurc tion Bipolar Tarsistors, IEEE Electror Deice Letters, Vol. 11, No. 1, April 1990