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Volumn 45, Issue 3-4, 2005, Pages 535-539

Improving reliability of beveled power semiconductor devices passivated by SIPOS

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FILM PREPARATION; GLOW DISCHARGES; PASSIVATION; POLYIMIDES; POLYSILICON; SILICON;

EID: 15744405288     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.10.005     Document Type: Article
Times cited : (9)

References (15)
  • 2
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    • On the high temperature operation of high voltage power devices
    • V.V.N. Obreja, and K.I. Nuttall On the high temperature operation of high voltage power devices CAS Int. Proc. 2 2002 253 256
    • (2002) CAS Int. Proc. , vol.2 , pp. 253-256
    • Obreja, V.V.N.1    Nuttall, K.I.2
  • 3
    • 0035744164 scopus 로고    scopus 로고
    • Investigation on operation of silicon power devices in the breakdown region of electrical characteristic
    • V.V.N. Obreja Investigation on operation of silicon power devices in the breakdown region of electrical characteristic CAS Int. Proc. 2 2001 485 488
    • (2001) CAS Int. Proc. , vol.2 , pp. 485-488
    • Obreja, V.V.N.1
  • 4
    • 0030417797 scopus 로고    scopus 로고
    • On the nature of leakage current of fast recovery silicon pn junctions
    • V.V.N. Obreja, and G. Dinoiu On the nature of leakage current of fast recovery silicon pn junctions CAS Int. Proc. 2 1996 455 458
    • (1996) CAS Int. Proc. , vol.2 , pp. 455-458
    • Obreja, V.V.N.1    Dinoiu, G.2
  • 5
    • 0032309322 scopus 로고    scopus 로고
    • Effect of bulk carrier generation-recombination centers upon the I-V characteristic of silicon PN junctions
    • V.V.N. Obreja, G. Dinoiu, and E. Lakatos Effect of bulk carrier generation-recombination centers upon the I-V characteristic of silicon PN junctions CAS Int. Proc. 1 1998 293 296
    • (1998) CAS Int. Proc. , vol.1 , pp. 293-296
    • Obreja, V.V.N.1    Dinoiu, G.2    Lakatos, E.3
  • 6
    • 0026374918 scopus 로고
    • SIPOS-passivation for high voltage power devices with planar junction termination
    • Stockmeier T, Lilja K. SIPOS-passivation for high voltage power devices with planar junction termination. In: Proc of the 3rd ISPSD 1991:145-8
    • (1991) Proc of the 3rd ISPSD , pp. 145-148
    • Stockmeier, T.1    Lilja, K.2
  • 7
    • 0027683684 scopus 로고
    • Comparison of DMOS/IGBT-compatible high-voltage termination structures and passivation techniques
    • J. Korec, and R. Held Comparison of DMOS/IGBT-compatible high-voltage termination structures and passivation techniques IEEE Trans. Electron Dev. 40 10 1993 1845 1854
    • (1993) IEEE Trans. Electron Dev. , vol.40 , Issue.10 , pp. 1845-1854
    • Korec, J.1    Held, R.2
  • 9
    • 0018030080 scopus 로고
    • Maximum surface and bulk electric fields at breakdown for planar and beveled devices
    • S.A. Michael, and A.K.T. Victor Maximum surface and bulk electric fields at breakdown for planar and beveled devices IEEE Trans. Electron Dev. 25 10 1978 1266 1270
    • (1978) IEEE Trans. Electron Dev. , vol.25 , Issue.10 , pp. 1266-1270
    • Michael, S.A.1    Victor, A.K.T.2
  • 13
    • 0026170147 scopus 로고
    • The correlation between the breakdown voltage of power devices passivated by semi-insulating polycrystalline silicon and the effective density of interface charges
    • E.P. Burte, and G.H. Schulze The correlation between the breakdown voltage of power devices passivated by semi-insulating polycrystalline silicon and the effective density of interface charges IEEE Trans. Electron Dev. 38 6 1991 1505 1509
    • (1991) IEEE Trans. Electron Dev. , vol.38 , Issue.6 , pp. 1505-1509
    • Burte, E.P.1    Schulze, G.H.2
  • 14
    • 0015613904 scopus 로고
    • Field distribution near the surface of beveled p-n junction in high-voltage devices
    • Jozef Cornu Field distribution near the surface of beveled p-n junction in high-voltage devices IEEE Trans. Electron Dev. 20 4 1973 347 352
    • (1973) IEEE Trans. Electron Dev. , vol.20 , Issue.4 , pp. 347-352
    • Cornu, J.1
  • 15
    • 0033639909 scopus 로고    scopus 로고
    • On the leakage current of present-day manufactured semiconductor junctions
    • V.V.N. Obreja On the leakage current of present-day manufactured semiconductor junctions Solid-State Electron. 44 1 2000 49 57
    • (2000) Solid-State Electron. , vol.44 , Issue.1 , pp. 49-57
    • Obreja, V.V.N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.