Impact of hydrogen dilution on microstructure and optoelectronic properties of silicon films deposited using trisilane

Journal of Physics D: Applied Physics

Volumn 38, Issue 6, 2005, Pages 838-842

  Du, Wenhui ^a   Yang, Xiesen ^a   Povolny, Henry ^a   Liao, Xianbo ^a,b   Deng, Xunming ^a  

^a UNIVERSITY OF TOLEDO   (United States)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; GRAIN BOUNDARIES; MICROSTRUCTURE; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; PHOTOVOLTAIC EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS SILICON FILMS; DEFECT DENSITIES; MOLECULAR RATIO; RADIOFREQUENCY;

THIN FILMS;

EID: 15744392511     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/6/008     Document Type: Article

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