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Volumn 44, Issue 1 A, 2005, Pages 358-364
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Growth of twinned epitaxial layers on Si(111)√3 × √3-B studied by low-energy electron microscopy
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Author keywords
Boron; Epitaxial growth; Low energy electron microscopy; Silicon; Twin
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Indexed keywords
BOUNDARY CONDITIONS;
ELECTRIC PROPERTIES;
EPITAXIAL GROWTH;
IMAGE PROCESSING;
NUCLEATION;
OPTIMIZATION;
SCANNING TUNNELING MICROSCOPY;
SUPERLATTICES;
X RAY DIFFRACTION;
LOW-ENERGY ELECTRON MICROSCOPY (LEEM);
TWIN;
TWIN BOUNDARY ENERGY;
TWINNED ORIENTATIONS;
AMORPHOUS SILICON;
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EID: 15744369243
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.44.358 Document Type: Article |
Times cited : (7)
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References (17)
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