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Volumn 44, Issue 1 A, 2005, Pages 358-364

Growth of twinned epitaxial layers on Si(111)√3 × √3-B studied by low-energy electron microscopy

Author keywords

Boron; Epitaxial growth; Low energy electron microscopy; Silicon; Twin

Indexed keywords

BOUNDARY CONDITIONS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; IMAGE PROCESSING; NUCLEATION; OPTIMIZATION; SCANNING TUNNELING MICROSCOPY; SUPERLATTICES; X RAY DIFFRACTION;

EID: 15744369243     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.358     Document Type: Article
Times cited : (7)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.