Microwave dielectric properties of CuO-V2O5-Bi 2O3-doped ZnNb2O6 ceramics with low sintering temperature

Journal of Electroceramics

Volumn 14, Issue 1, 2005, Pages 67-74

  Zhang, Ying Chun ^a,b   Yue, Zhen Xing ^a   Gui, Zhi Lun ^a   Li, Long Tu ^a  

^a TSINGHUA UNIVERSITY   (China)

^b HEILONGJIANG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Low temperature sintering; Microwave dielectric ceramics; ZnNb2O6

Indexed keywords

COPPER COMPOUNDS; DIELECTRIC PROPERTIES; GRAIN BOUNDARIES; LOW TEMPERATURE EFFECTS; SCANNING ELECTRON MICROSCOPY; SINTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

LOW TEMPERATURE SINTERING; MICROWAVE DIELECTRIC CERAMICS; MICROWAVE FREQUENCY; ZNNB2O6;

CERAMIC MATERIALS;

EID: 15744364899     PISSN: 13853449     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10832-005-6586-0     Document Type: Article

References (13)

1. M. Maeda, T. Yamamura, and T. Ikeda, Jpn. Appl. Phys., Supp.26, 76 (1987).
2. H.J. Lee, I.T. Kim, and K.S. Hong, Jpn. J. Appl. Phys., 36, 1318 (1997).
3. H.J. Lee, K.S. Hong, and S.J. Kim, Mater. Res. Bull., 32(7), 847 (1997).
4. D.W. Kim, K.H. Ko, and K.S. Hong, J. Am. Ceram. Soc., 84, 1286 (2001).
5. Y.C. Zhang, L.T. Li, Z.X. Yue, and Z.L. Gui, Key Engng. Mater., 224-226, 5 (2002).
6. H. Kagata, T. Inoue, J. Kato, and I. Kameyana, Jpn. J. Appl. Phys., 31, 3152 (1992).
7. M. Valant, D. Suvorov, and D. Kolar, J. Mater. Res., 11, 928 (1996).
8. B.W. Hakki and P.D. Coleman, IEEE. Trans. Microw. Theory Tech., 8, 402 (1960).
9. W.E. Courteny, IEEE. Trans. Microw. Theory and Tech., 18, 476 (1970).
10. Y. Kobayashi and M. Katoh, IEEE. Trans. Microw. Theory Tech., 33, 586 (1985).
11. W.S. Kim, T.H. Kim, E.S. Kim, and K.H. Yoon, Jpn. Appl. Phys., 37(2), 5367 (1998).
12. S. Kucheiko, J.W. Choi, H.J. Kim, and H.J. Jung, J. Am. Ceram. Soc., 79, 2739 (1996).
13. D.A. Sagala and S. Nambu, J. Am. Ceram. Soc., 75, 2573 (1992).