Wide-bandgap CIAS thin-film photovoltaics with transparent back contacts for next generation single and multi-junction devices

Materials Science and Engineering: B

Volumn 116, Issue 3 SPEC.ISS., 2005, Pages 297-302

  Woods, Lawrence M ^a   Kalla, Ajay ^a   Gonzalez, Damian ^a   Ribelin, Rosine ^a  

^a ITN ENERGY SYSTEMS INC   (United States)

Author keywords

Al content; CIAS; Thin films; Transparent conducting oxides; Wide bandgap

Indexed keywords

COPPER COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM; POWER GENERATION; SEMICONDUCTOR JUNCTIONS; THIN FILMS; TRANSITION METAL COMPOUNDS;

AL-CONTENT; COPPER INDIUM ALUMINUM DISELENIDE (CIAS); TRANSPARENT CONDUCTING OXIDES; WIDE-BANDGAP;

PHOTOVOLTAIC CELLS;

EID: 15744364457     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.05.056     Document Type: Conference Paper

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