AlN synthesis by direct nitriding method in a fluidized bed with bed materials of AlN

Kagaku Kogaku Ronbunshu

Volumn 31, Issue 1, 2005, Pages 51-55

  Kojima, Toshinori ^a   Komiya, Shinpei ^a   Uemiya, Sigeyuki ^b  

^a SEIKEI UNIVERSITY   (Japan)

^b GIFU UNIVERSITY   (Japan)

Author keywords

Aluminum Nitride; Direct Nitriding Method; Fluidized Bed; Particle

Indexed keywords

AGGLOMERATION; ELECTRONIC EQUIPMENT; FLUIDIZED BEDS; MELTING; NITRIDING; PACKAGING MATERIALS; SEMICONDUCTOR MATERIALS; SILICON; SYNTHESIS (CHEMICAL); THERMAL CONDUCTIVITY;

CARBOTHERMAL REDUCTION; DIRECT NITRIDING METHOD; HEAT PRODUCTION; REACTION TEMPERATURE;

ALUMINUM NITRIDE;

ALUMINUM COMPOUNDS; ELECTRONICS; FLUIDIZED BEDS; SILICON; SYNTHESIS; THERMAL CONDUCTIVITY;

EID: 15544373912     PISSN: 0386216X     EISSN: None     Source Type: Journal    
DOI: 10.1252/kakoronbunshu.31.51     Document Type: Article

References (4)

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2. Selvaduray, G and L. Sheet; "AlN: Review of Synthesis Methods," Materials Science and Technology, 9, 463-473 (1993)
3. Takahashi, T. and T. Chida; "Devices Using Nitride Materials for Silicon Semiconductor Manufacturing," Journal of the Ceramic Society of Japan, 30, 431-434 (1995)
4. Yoneya, K.; "A1N as material (in Japanese)," Journal of the Ceramic Society of Japan, 26, 725-732 (1991)