Improved field-emission properties of carbon nanotube field-emission arrays by controlled density growth of carbon nanotubes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 1 A, 2005, Pages 365-370

  Juan, Chuan Ping ^a,b,c   Chen, Kuo Ji ^a,b,c   Tsai, Chun Chien ^a,b,c   Lin, Kao Chao ^a,b,c   Hong, Wei Kai ^a,b,c   Hsieh, Chen Yu ^a,b,c   Wang, Wen Pin ^a,b,c   Lai, Rui Ling ^a,b,c   Chen, Kuei Hsien ^a   Chen, Li Chyong ^b   Cheng, Huang Chung ^a,b,c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Carbon nanotubes; Density control of CNTs; Inactive thin film layer

Indexed keywords

CATALYSTS; ELECTRIC FIELDS; INDIUM COMPOUNDS; OPTIMIZATION; PHOTOLITHOGRAPHY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SYNTHESIS (CHEMICAL); THIN FILMS;

DENSITY CONTROL OF CNT; INACTIVE THIN-FILM LAYERS; MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (MPCVD); PLASMA TREATMENT;

CARBON NANOTUBES;

EID: 15544363240     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.365     Document Type: Article

References (21)

1. C. T. White, D. H. Robertson and J. W. Mintmire: Phys. Rev. B 47 (1993) 5485.
2. J. W. G. Wildoer, L. C. Venema, A. Rinzler, R. E. Smalley and C. Dekker: Nature 391 (1998) 59.
3. F. G. Tantair, L. C. Chen, S. L. Wei, W. K. Hong, K. H. Chen, H. C. Cheng: J. Vac. Sci. & Technol. B 18 (2000) 1207.
4. P. Vaudaine and R. Meyer: IEEE IEDM Tech. Dig. (1991) p. 197.
5. H. H. Busta, J. E. Pogemiller and B. J. Zimmerman: J. Micromech. Microeng. 3 (1993) 45.
6. T. H. P. Chang et al.: J. Vac. Sci. & Technol. B 9 (1991) 438.
7. C. A. Spindt: Surf. Sci. 266 (1992) 145.
8. C. A. Spindt: J. Appl. Phys. 39 (1968) 3505.
9. W. A. de Heer, A. Chatelain and D. Ugarte: Science 270 (1995) 1179.
10. P. G. Collins and A. Zettl: Appl. Phys. Lett. 69 (1996) 1969.
11. Q. H. Wang, T. D. Corrigan, J. Y. Dai and R. P. H. Chang: Appl. Phys. Lett. 70 (1997) 3308.
12. Z. F. Ren, Z. P. Huang, J. W. Xu, J. H. Wang, P. Bush, M. P. Siegal and P. N. Provencio: Science 282 (1998) 1105.
13. J. M. Bonard, J. P. Salvetat, T. Stockli, W. A. de Heer, L. Forro and A. Chatelain: Appl. Phys. Lett. 73 (1998) 918.
14. A. G. Rinzler, J. Liu, H. Dai, P. Nikolaev, C. B. Huffman, F. J. Rodriguez-Macias, P. J. Boul, A. H. Lu, D. T. Colbert, R. S. Lee, J. E. Fischer, A. M. Rao, P. C. Eklund and R. E. Smalley: Appl. Phys. A 67 (1998) 29.
15. J. M. Mao, L. F. Sun, L. X. Qian, Z. W. Pan, B. H. Chang, W. Y. Zhou, G. Wang and S. S. Xie: Appl. Phys. Lett. 72 (1998) 3297.
16. C. J. Lee, K. H. Son, J. Park, J. E. Yoo, Y. Huh and J. Y. Lee: Chem. Phys. Lett. 338 (2001) 113.
17. H. Jantoljak, J. P. Salvetat, L. Forro and C. Thomson: Appl. Phys. A 67 (1998) 113.
18. Y. C. Choi, D. J. Bae, Y. H. Lee, B. S. Lee, G. S. Park, W. B. Choi, N. S. Lee and J. M. Kim: J. Vac. Sci. & Technol. A 18 (2000) 1864.
19. W. Lei, B. P. Wang, H. C. Yin, Y. X. Wu and C. Z. Chang: Nuclear Instrum. Methods Phys. Res. A 451 (2000) 389.
20. N. V. Egorov and A. A. Almazov: Vacuum 52 (1999) 295.
21. O. Groning, O. M. Kuttel, C. Emmenegger, P. Groning and L. Schlapbach: J. Vac. Sci. & Technol. B 18 (2000) 665.