Rabi flopping of intersubband transitions in GaAs/AlGaAs MQWs

Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

Volumn 89, Issue , 2003, Pages

  Luo, C W ^a   Reimann, K ^a   Woerner, M ^a   Elsaesser, T ^a   Hey, R ^b   Ploog, K H ^b  

^a MAX BORN INSTITUT   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTROOPTICAL EFFECTS; LASER PULSES; LIGHT ABSORPTION; LIGHT POLARIZATION; LIGHT TRANSMISSION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY; TEMPERATURE; ALUMINUM GALLIUM ARSENIDE; ELECTRIC FIELD EFFECTS; QUANTUM ELECTRONICS; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS;

ELECTRO-OPTIC SAMPLING; INTERSUBBAND TRANSITIONS; RABI FLOPPING; ULTRAFAST PROCESSES;

SEMICONDUCTOR QUANTUM WELLS;

ELECTRIC-FIELD AMPLITUDE; ELECTROOPTIC SAMPLING; GAAS-ALGAAS; INTERSUBBAND TRANSITIONS; MODULATION-DOPED; RABI FLOPPING;

EID: 1542606436     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. F. Eickemeyer et al., "Coherent nonlinear propagation of ultrafast electric field transients through intersubband resonances," Appl. Phys. Lett. 79, 165 (2001).
2. K. Reimann et al., "Direct field-resolved detection of THz transients with MV/cm amplitudes,", submitted to Opt. Lett.
3. R. A. Kaindl et al., "Homogeneous broadening and excitation-induced dephasing of intersubband transitions in a quasi-two-dimensional electron gas," Phys. Rev. B 63, 161308(R)-1-4 (2001).