Magnetoresistance of a weakly disordered III-V semiconductor quantum well in a magnetic field parallel to interfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 11, 1997, Pages 6436-6439

  Mal'shukov A ^a   Chao, K ^b  

^a INSTITUTE OF SPECTROSCOPY   (Russian Federation)

^b LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1542575079     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.6436     Document Type: Article

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