Evolution of Nanocrystalline Silicon Layers Deposited at 150°C for Thin Film Transistor Channels

Materials Research Society Symposium - Proceedings

Volumn 769, Issue , 2003, Pages 171-176

  Cheng, I Chun ^a   Allen, Steven ^a   Wagner, Sigurd ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; DOPING (ADDITIVES); HYDROGENATION; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; POLYIMIDES; SCANNING ELECTRON MICROSCOPY;

DRAIN GEOMETRY; ELECTRON FIELD EFFECTS;

THIN FILM TRANSISTORS;

EID: 1542544679     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-769-h6.8     Document Type: Conference Paper

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