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Volumn 130, Issue 3-4, 2004, Pages 155-158
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The effect of hydrostatic pressure on metal-insulator transition in quantum well semiconductor systems
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Author keywords
D. Donor energy; D. Impurity state; D. Metal insulator transition; D. Quantum well system
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Indexed keywords
BINDING ENERGY;
ELECTRIC CONDUCTIVITY;
HETEROJUNCTIONS;
HYDROSTATIC PRESSURE;
IONIZATION;
MAGNETIC FIELD EFFECTS;
METAL INSULATOR TRANSITION;
DONOR ENERGY;
IMPURITY STATE;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 1542505981
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ssc.2004.02.007 Document Type: Article |
Times cited : (16)
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References (19)
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