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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 316, Issue 1-2, 2003, Pages 107-117

Effect of different coupling on localized interface optical-phonon modes in N-constituent superlattices with a defect layer

(3) Zhang, Xi Li a Gu, Ben Yuan a,b Chen, Ke Qiu c

a INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

b CCAST WORLD LABORATORY (China)

c TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

PHONONS;

DIELECTRIC CONTINUUM APPROXIMATION; DIELECTRIC MEDIUM; FREQUENCY DEPENDENT; FREQUENCY INDEPENDENT; INTERFACE OPTICAL-PHONON MODES; PHYSICAL PICTURES; STRUCTURAL DEFECT; STRUCTURAL PARAMETER;

DEFECTS;

ARSENIC DERIVATIVE; GALLIUM;

ARTICLE; DIELECTRIC CONSTANT; ELECTRONICS; MATERIALS; MATHEMATICAL ANALYSIS; MODEL; OPTICS; SEMICONDUCTOR;

EID: 1542406784 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/S0375-9601(03)01053-3 Document Type: Article

Times cited : (6)

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