Very high (>1019 cm-3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine

Applied Physics Letters

Volumn 70, Issue 9, 1997, Pages 1149-1151

  Malik, R ^a   Gulari, E ^a   Bhattacharya, P ^b   Linder, K K ^b   Rieh, J S ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b University of Michigan   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1542392649     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119074     Document Type: Article

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