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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 384-392

Design of i-line photoresist capable of sub-quarter micron lithography: Effects of novel phenolic resin with controlled end group

(3) Douki, Katsuji a Kajita, Toru a Iwanaga, Shin Ichiro a

a JSR CORPORATION (Japan)

Author keywords

Basic catalyst; Controlled end group; Dissolution characteristics; I line photoresist; Off axis illumination; Phenolic resin

Indexed keywords

CATALYSIS; CATALYSTS; DISSOLUTION; GROUP TECHNOLOGY; PHENOLS; PHOTORESISTORS; PHOTORESISTS; PLASTICS; POLYMERS; RESINS; SURFACE TREATMENT; THICKNESS MEASUREMENT;

ANNULAR ILLUMINATIONS; BASIC CATALYST; CONTROLLED END GROUP; I-LINE PHOTORESIST; NEW DESIGNS; OFF-AXIS ILLUMINATION; POLYMERIZATION SYSTEMS;

PHENOLIC RESINS;

EID: 1542388902 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.312428 Document Type: Conference Paper

Times cited : (4)

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