Nd:YAG laser induced damage on ultrathin silicon samples

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2714, Issue , 1996, Pages 289-293

  Riede, Wolfgang ^a   Franck, Jerome B ^b  

^a GERMAN AEROSPACE CENTER DLR   (Germany)

^b AIR FORCE OFFICE OF SCIENTIFIC RESEARCH   (United States)

Author keywords

Darkfield imaging; Scatter probe technique; Ultrathin silicon samples

Indexed keywords

CHARGE COUPLED DEVICES; LASER DAMAGE; LASERS; MICROMETERS; NEODYMIUM; NEODYMIUM LASERS; OPTICAL MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SURFACE MORPHOLOGY; SURFACES; THICKNESS MEASUREMENT;

BEAM ANALYZERS; CCD ARRAYS; DARKFIELD IMAGING; FLUENCE; IN-SITU; LASER INDUCED; ND:YAG LASERS; PROBE SYSTEMS; SCATTER PROBE TECHNIQUE; SINGLE SHOTS; SURFACE DAMAGES; SURFACE MODIFICATION.; SURFACE POLISHES; TRANSVERSE MODES; ULTRATHIN SILICON SAMPLES;

SILICON WAFERS;

EID: 1542373978     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.240396     Document Type: Conference Paper

References (1)

1. J. B. Franck, S. C. Seitel, V. A. Hodgkin, W. N. Faith and J. O. Porteus, "Automated Pulsed Testing Using a Scatter-Probe Damage Monitor", Laser Induced Damage in Optical Materials, 1984, ed. by H. E. Bennett, A. H. Guenther, D. Milam, and B. E. Newnam, Washington, DC, 1986 (NBS Spec. Publ. 727, pp. 71-76).