Electron paramagnetic resonance parameters of Co2+ in GaP, InP, and GaAs semiconductors

Journal of Applied Physics

Volumn 95, Issue 4, 2004, Pages 1945-1948

  Zheng, Wen Chen ^a,b,c   Wu, Shao Yi ^b,d   Tang, Sheng ^a   Zi, Jian ^b,c  

^a SICHUAN UNIVERSITY   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

^c FUDAN UNIVERSITY   (China)

^d UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; IONS; PARAMAGNETIC RESONANCE; PERTURBATION TECHNIQUES; SEMICONDUCTING INDIUM PHOSPHIDE;

ATOMIC NUMBER; COVALENCY; CRYSTAL FIELD MECHANISM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1542336941     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1644040     Document Type: Article

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