Low Temperature Growth of GaAs on Si Substrates for Ultra-fast Photoconductive Switches

Materials Research Society Symposium - Proceedings

Volumn 768, Issue , 2003, Pages 81-86

  Ma, Kai ^a   Urata, Ryohei ^a   Miller, David A B ^a   Harris Jr , James S ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG TO DIGITAL CONVERSION; ATOMIC FORCE MICROSCOPY; BANDWIDTH; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUITS; MOLECULAR BEAM EPITAXY; PERTURBATION TECHNIQUES; PHOTOCONDUCTIVITY; SILICON; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ANTI-PHASE DOMAIN (APD) DENSITY; PHOTOCONDUCTIVE SWITCHES;

GALLIUM COMPOUNDS;

EID: 1542334638     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-768-g3.14     Document Type: Conference Paper

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