Packaging Considerations for Very High Temperature Microsystems

Proceedings of IEEE Sensors

Volumn 1, Issue 2, 2002, Pages 1139-1143

  Savrun, Ender ^a  

^a Sienna Technologies Inc   (United States)

Author keywords

Aluminum Nitride; High Temperature; MEMS; Pressure Sensor; Silicon Carbide

Indexed keywords

ALUMINUM NITRIDE; COMBUSTION; COSTS; HIGH TEMPERATURE ENGINEERING; JET ENGINES; PACKAGING; SILICON CARBIDE; SUBSTRATES; THERMAL CONDUCTIVITY; THERMAL EFFECTS;

HIGH TEMPERATURE; PRESSURE SENSORS; THERMOMECHANICAL COMPATIBILITY;

MICROELECTROMECHANICAL DEVICES;

EID: 1542331446     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. th Intl. High Temp. Elect. Conf., p.257-260.
2. th Intl. High Temp. Elect. Conf., p.103-108.
3. Savrun, E., and Johnson, W.R. (1999) "Aluminum Nitride Packages for High-Power, High-Temperature Electronics," Sienna Technical Report No. 982, NASA Contract No. NAS3-99046.
4. th AIAA Mtg., Paper No. 2001-4652.
5. Okojie, R.S., Ned, A.A., and Kurtz, A.D. (1997) The Intl. Conf. Solid. State Sensors Actuators-97, Digest of Tech. Papers, v.2, p. 1407-1409.