An Effective and Practical Analysis Technique for Open Defect Isolation at IDD Leakage Failure by Observing Transient Photo Emission

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 1998, Pages 157-162

  Nishikawa, A ^a   Kato, N I ^a   Matsuzawa, J ^a   Takagi, K ^a   Miura, N ^a  

^a ITES Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE ANALYSIS; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; LSI CIRCUITS; PHOTOEMISSION; SCANNING ELECTRON MICROSCOPY;

EMISSION MICROSCOPY (EMS); SECONDARY ELECTRON IMAGE (SEI);

CMOS INTEGRATED CIRCUITS;

EID: 1542301012     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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2. C. F. Hawkins, J. M. Soden, E. I. Cole. Jr., E. S. Snyder: Proc. of 16th ISTFA, pp 55-67 (1990)
3. O. Tokuhiro, A. Nishikawa, N. Miura: Dig. of 24th R&M Symposium, pp 393-398 (1994)
4. A. Nishikawa, J. Matsuzawa, C. Odani, N. Miura: Dig. of 26th of R&M Symposium, pp 71-76 (1996)