Electronic structure calculations for MoSe2 using extended huckel tight-binding method

Modern Physics Letters B

Volumn 18, Issue 1, 2004, Pages 35-44

  Galvan, Donald H ^a  

^a CENTRO DE CIENCIAS DE LA MATERIA CONDENSADA   (Mexico)

Author keywords

Chalcogenides; Electrical properties; Electronic structure

Indexed keywords

DRYSDALLITE; MOLYBDENUM; SELENIDE; SELENIUM DERIVATIVE; UNCLASSIFIED DRUG;

ANALYTIC METHOD; ARTICLE; CALCULATION; CHEMICAL BINDING; DENSITY; ELECTRONICS; SEMICONDUCTOR; STRUCTURE ANALYSIS; THEORETICAL MODEL;

EID: 1542288381     PISSN: 02179849     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217984904006561     Document Type: Article

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