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Volumn 1996-November, Issue , 1996, Pages 319-331

A Review of Wet Etch Formulas for Silicon Semiconductor Failure Analysis

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; CHEMICAL ANALYSIS; CHEMICAL MECHANICAL POLISHING; CHROMIUM COMPOUNDS; DEFECTS; FAILURE ANALYSIS; WET ETCHING;

EID: 1542284484     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.31399/asm.cp.istfa1996p0319     Document Type: Conference Paper
Times cited : (7)

References (44)
  • 2
    • 0000365776 scopus 로고
    • Copper precipitation on dislocations in silicon
    • Oct
    • W. C. Dash, "Copper precipitation on dislocations in silicon," Journal of Applied Physics, vol. 27(1 o), pp. 1193-1195, Oct 1956.
    • (1956) Journal of Applied Physics , vol.27 , Issue.1 o , pp. 1193-1195
    • Dash, W. C.1
  • 3
    • 0009431195 scopus 로고
    • Evidence of dislocation jogs in deformed silicon
    • Apr
    • W. C. Dash, "Evidence of dislocation jogs in deformed silicon," Journal of Applied Physics, vol. 29(4), p. 705, Apr. 1958.
    • (1958) Journal of Applied Physics , vol.29 , Issue.4 , pp. 705
    • Dash, W. C.1
  • 4
    • 0042305184 scopus 로고
    • Gold-induced climb of dislocations in silicon
    • W. C. Dash, "Gold-induced climb of dislocations in silicon," Journal of Applied Physics, vol. 31(12), pp. 2275-2283,1960.
    • (1960) Journal of Applied Physics , vol.31 , Issue.12 , pp. 2275-2283
    • Dash, W. C.1
  • 5
    • 0001695438 scopus 로고
    • Chemical etching of silicon I. The system HF, HN03, and H20
    • Jun
    • H. Robbins and B. Schwartz, "Chemical etching of silicon I. The system HF, HN03, and H20," Journal of the Electrochemical Society, vol. 106(6), pp. 505-508, Jun. 1959.
    • (1959) Journal of the Electrochemical Society , vol.106 , Issue.6 , pp. 505-508
    • Robbins, H.1    Schwartz, B.2
  • 6
    • 84975367006 scopus 로고
    • Chemical etching of silicon II. The system HF, HN03, H20, and HC2H302
    • H. Robbins and B. Schwartz, "Chemical etching of silicon II. The system HF, HN03, H20, and HC2H302," Journal of the Electrochemical Society, vol. 107(2), p. 108-111,1960.
    • (1960) Journal of the Electrochemical Society , vol.107 , Issue.2 , pp. 108-111
    • Robbins, H.1    Schwartz, B.2
  • 7
    • 0008812569 scopus 로고
    • Chemical etching of silicon III. A temperature study in the acid system
    • Apr
    • H. Robbins and B. Schwartz, "Chemical etching of silicon III. A temperature study in the acid system"" Journal of the Electrochemical Society, vol. 108(4), pp. 365-372, Apr. 1961.
    • (1961) Journal of the Electrochemical Society , vol.108 , Issue.4 , pp. 365-372
    • Robbins, H.1    Schwartz, B.2
  • 8
    • 0017266754 scopus 로고
    • Chemical etching of silicon IV. Etching technology
    • Dec
    • H. Robbins and B. Schwartz, "Chemical etching of silicon IV. Etching technology" Journal of the Electrochemical Society, vol. 123(12), pp. 1903-1909, Dec. 1976.
    • (1976) Journal of the Electrochemical Society , vol.123 , Issue.12 , pp. 1903-1909
    • Robbins, H.1    Schwartz, B.2
  • 9
    • 0017926944 scopus 로고
    • An examination of the chemical staining of silicon
    • Jan
    • D. G. Schimmel and M. J. Elkind, "An examination of the chemical staining of silicon," Journal of the Electrochemical Society, vol. 125(1), pp. 152-155, Jan. 1978.
    • (1978) Journal of the Electrochemical Society , vol.125 , Issue.1 , pp. 152-155
    • Schimmel, D. G.1    Elkind, M. J.2
  • 10
    • 0018439616 scopus 로고
    • Defect etch for <100> silicon ingot evaluation
    • D. G. Schimmel, "Defect etch for <100> silicon ingot evaluation," Journal of the Electrochemical Society, vol. 126(3), pp. 479-483,1979.
    • (1979) Journal of the Electrochemical Society , vol.126 , Issue.3 , pp. 479-483
    • Schimmel, D. G.1
  • 11
    • 84975413933 scopus 로고
    • A water-amine-complexing agent system for etching silicon
    • Sep
    • R. M. Finne and D. L Klein, "A water-amine-complexing agent system for etching silicon," Journal of the Electrochemical Society, vol. 114(9), pp. 965-979, Sep. 1967.
    • (1967) Journal of the Electrochemical Society , vol.114 , Issue.9 , pp. 965-979
    • Finne, R. M.1    Klein, D. L2
  • 12
    • 0019079097 scopus 로고
    • 2 composites in HF/glycerol mixtures
    • Nov
    • 2 composites in HF/glycerol mixtures," Journal of the Electrochemical Society, vol. 127(11), pp. 2433-2438, Nov. 1980.
    • (1980) Journal of the Electrochemical Society , vol.127 , Issue.11 , pp. 2433-2438
    • Deckert, C. A.1
  • 13
    • 84951050944 scopus 로고
    • Dislocation etch for (100) planes in silicon
    • Jul
    • F. Secco d'Aragona, "Dislocation etch for (100) planes in silicon," Journal of the Electrochemical Society, vol. 119(7), pp. 948-951, Jul. 1972
    • (1972) Journal of the Electrochemical Society , vol.119 , Issue.7 , pp. 948-951
    • Secco d'Aragona, F.1
  • 15
    • 0000926419 scopus 로고
    • ChromsNureFluasNure als spezifisches System zur erzgrubenentwicklung auf Sihzium (Chromic acid-hydrofluoric acid as specific reagents for the development of etching pits in silicon)
    • Von Erhard Sirti and Annemarie Adler, "ChromsNureFluasNure als spezifisches System zur erzgrubenentwicklung auf Sihzium (Chromic acid-hydrofluoric acid as specific reagents for the development of etching pits in silicon)," Zeitschrift fur Metallkunde, vol. 52, pp. 529-531,1961.
    • (1961) Zeitschrift fur Metallkunde , vol.52 , pp. 529-531
    • Sirti, Von Erhard1    Adler, Annemarie2
  • 16
    • 0343810768 scopus 로고
    • A new defect etch for polyciystalline silicon
    • Mar
    • B. L Sopori, "A new defect etch for polyciystalline silicon," Journal of the Electrochemical Society, vol. 131(3), pp. 667-672, Mar. 1984.
    • (1984) Journal of the Electrochemical Society , vol.131 , Issue.3 , pp. 667-672
    • Sopori, B. L1
  • 17
    • 0017491527 scopus 로고
    • A new preferential etch for defects in silicon crystals
    • Margaret Wright Jenkins, "A new preferential etch for defects in silicon crystals," Journal of the Electrochemical Society, vol. 124(5), pp. 757-762,1977.
    • (1977) Journal of the Electrochemical Society , vol.124 , Issue.5 , pp. 757-762
    • Jenkins, Margaret Wright1
  • 18
    • 0021426017 scopus 로고
    • An etch for delineation of defects in silicon
    • K.H. Yang, "An etch for delineation of defects in silicon," Journal of the Electrochemical Society, vol. 131(5), pp. 1140-1145,1984.
    • (1984) Journal of the Electrochemical Society , vol.131 , Issue.5 , pp. 1140-1145
    • Yang, K.H.1
  • 19
    • 0014800514 scopus 로고
    • Cleaning solutions based on hydrogenperoxide for use in silicon semiconductor technology
    • Jun
    • Werner Kern and David. A. Puotinen, "Cleaning solutions based on hydrogenperoxide for use in silicon semiconductor technology," RCA Review, vol. 31, pp. 187-206, Jun. 1970.
    • (1970) RCA Review , vol.31 , pp. 187-206
    • Kern, Werner1    Puotinen, David. A.2
  • 21
    • 85124096906 scopus 로고
    • ASTM F47-88: Standard test method for ciystallographic perfection of silicon by preferential etch techniques
    • 05, Philadelphia, PA: ASTM
    • "ASTM F47-88: Standard test method for ciystallographic perfection of silicon by preferential etch techniques, in Annual Book of ASTM Standards, vol. 10.05, Philadelphia, PA: ASTM, 1988.
    • (1988) Annual Book of ASTM Standards , vol.10
  • 22
    • 85124107119 scopus 로고
    • Olin Hunt Specialty Products, West Paterson, NJ
    • Olin Hunt Process Chemical Data Sheets, Olin Hunt Specialty Products, West Paterson, NJ, 1990.
    • (1990) Olin Hunt Process Chemical Data Sheets
  • 23
    • 0002074109 scopus 로고
    • Some defects in crystals grown from the melt I. Detects caused by thermal stresses
    • E. Biltig, "Some defects in crystals grown from the melt I. Detects caused by thermal stresses," Proceedings of the Royal Society of London, Series A, vol. 235, pp. 37-54,1956.
    • (1956) Proceedings of the Royal Society of London, Series A , vol.235 , pp. 37-54
    • Biltig, E.1
  • 24
    • 0001668444 scopus 로고
    • Ein neues Verfahren zur Messung der Kristallisationsgeschwindigkeit der Metalle
    • J. Czochralski, "Ein neues Verfahren zur Messung der Kristallisationsgeschwindigkeit der Metalle", Zeitschnft fur Physikalische Chemie, vol. 92, pp. 219-221,1917.
    • (1917) Zeitschnft fur Physikalische Chemie , vol.92 , pp. 219-221
    • Czochralski, J.1
  • 25
    • 0002124963 scopus 로고
    • Microinterferometre differentiel a ondes polarisees
    • M.G. Nomarski, "Microinterferometre differentiel a ondes polarisees", Le J de Physique et le Radium, 16,59, 1955, pp. 9-16.
    • (1955) Le J de Physique et le Radium , vol.16 , Issue.59 , pp. 9-16
    • Nomarski, M.G.1
  • 26
    • 84933129981 scopus 로고
    • Etching of germanium and silicon
    • Apr
    • P. Wang, "Etching of germanium and silicon," The Sylvania Technologist, vol. 11(2), pp. 50-58, Apr. 1958.
    • (1958) The Sylvania Technologist , vol.11 , Issue.2 , pp. 50-58
    • Wang, P.1
  • 27
    • 0344495040 scopus 로고
    • Dislocation etch pits in silicon crystals
    • Dec
    • F. L. Vogel, Jr. and L C. Lovell, "Dislocation etch pits in silicon crystals," Journal of Applied Physics, vol. 27(12), pp. 1413-1415, Dec. 1956.
    • (1956) Journal of Applied Physics , vol.27 , Issue.12 , pp. 1413-1415
    • Vogel, F. L.1    Lovell, L C.2
  • 28
    • 0010515808 scopus 로고
    • Observations of dislocations in lineage boundaries in germanium (letter)
    • F. L Vogel, W. G. Pfann, H. E. Corey, and E.E. Thomas, "Observations of dislocations in lineage boundaries in germanium (letter)," Physical Review, vol. 90, pp.489-490,1953.
    • (1953) Physical Review , vol.90 , pp. 489-490
    • Vogel, F. L1    Pfann, W. G.2    Corey, H. E.3    Thomas, E.E.4
  • 29
    • 84918246700 scopus 로고
    • Preferential etch for use in optical determination of germanium crystal orientation
    • Mar
    • R. H. Wynne and C. Goldberg, "Preferential etch for use in optical determination of germanium crystal orientation," Transactions of AIME, Journal of Metals, vol. 5, p.436, Mar. 1953.
    • (1953) Transactions of AIME, Journal of Metals , vol.5 , pp. 436
    • Wynne, R. H.1    Goldberg, C.2
  • 30
    • 84918961924 scopus 로고
    • Evidence for oxidation growth at the oxide-silicon interface from controlled etch studies
    • Jul
    • W. A Pliskin and R. P. Gnall, "Evidence for oxidation growth at the oxide-silicon interface from controlled etch studies," Journal of the Electrochemical Society, vol. 111(7), pp. 872-873, Jul. 1964.
    • (1964) Journal of the Electrochemical Society , vol.111 , Issue.7 , pp. 872-873
    • Pliskin, W. A1    Gnall, R. P.2
  • 31
    • 0000411316 scopus 로고
    • On the mechanism of chemically etching germanium and silicon
    • Oct
    • D. R. Turner, "On the mechanism of chemically etching germanium and silicon," Journal of the Electrochemical Society, vol. 107(10), pp. 810-816, Oct. 1960.
    • (1960) Journal of the Electrochemical Society , vol.107 , Issue.10 , pp. 810-816
    • Turner, D. R.1
  • 32
    • 36849135360 scopus 로고
    • Dislocation arrays in germanium
    • Nov
    • W. W. Tyler and W. C. Dash, "Dislocation arrays in germanium," Journal of Applied Physics, vol. 28(11), pp. 1221-1224, Nov. 1957.
    • (1957) Journal of Applied Physics , vol.28 , Issue.11 , pp. 1221-1224
    • Tyler, W. W.1    Dash, W. C.2
  • 34
    • 49849126089 scopus 로고
    • Junction delineation and dislocation revealing in silicon by the HIO4-HF-H2O system
    • F. Nicolau, "Junction delineation and dislocation revealing in silicon by the HIO4-HF-H2O system," Solid State Electronics, vol. 12, pp. 446-448,1968.
    • (1968) Solid State Electronics , vol.12 , pp. 446-448
    • Nicolau, F.1
  • 35
    • 85124078060 scopus 로고
    • MIT Radiation Lab Series, McGraw-Hill, pg
    • MIT Radiation Lab Series, Volume 15, "Crystal Rectifiers", McGraw-Hill, 1948, pg 369.
    • (1948) Crystal Rectifiers , vol.15 , pp. 369
  • 36
    • 84910928800 scopus 로고
    • Staining cheat sheet fine-tuning of staining formulations for ICs made simple by the use of a reference staining poster
    • 2 Apr. 1 to 2-10.7. Also private communication
    • T. Mills, "Staining cheat sheet fine-tuning of staining formulations for ICs made simple by the use of a reference staining poster," Tutorial Notes, International Reliability Physics Symposium, 2 Apr. 1984, pp. 2-9.1 to 2-10.7. Also private communication.
    • (1984) Tutorial Notes, International Reliability Physics Symposium , pp. 2-9
    • Mills, T.1
  • 37
    • 0025401128 scopus 로고
    • MEMC etch - a chromium trioxidefree etchant for delineating dislocations and slip in silicon
    • Mar
    • T. C. Chandler, "MEMC etch - a chromium trioxidefree etchant for delineating dislocations and slip in silicon," Journal of the Electrochemical Society, vol. 137(3), pp. 944-948, Mar. 1990.
    • (1990) Journal of the Electrochemical Society , vol.137 , Issue.3 , pp. 944-948
    • Chandler, T. C.1
  • 40
    • 85124109386 scopus 로고
    • U.S. Patent 2,847,287
    • Clarence R. Landgren, U.S. Patent 2,847,287,1956.
    • (1956)
    • Landgren, Clarence R.1
  • 41
    • 85124075678 scopus 로고
    • Somner U.S. Patent 2,734,806
    • Somner P. Wolsky, U.S. Patent 2,734,806,1954.
    • (1954)
    • Wolsky, P.1
  • 44
    • 0039895166 scopus 로고
    • Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining
    • Jun. 20
    • R. Subrahmanyan, H. Z. Massoud, and R. B. Fair, "Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining," Applied Physics Letters, vol. 52(25), pp. 2145-2147, Jun. 20,1988.
    • (1988) Applied Physics Letters , vol.52 , Issue.25 , pp. 2145-2147
    • Subrahmanyan, R.1    Massoud, H. Z.2    Fair, R. B.3


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