X-ray characterization of Si microstructures with high spatial resolution

Journal of Applied Physics

Volumn 95, Issue 4, 2004, Pages 1662-1666

  Cedola, A ^a   Lagomarsino, S ^a   Scarinci, F ^a   Servidori, M ^b   Stanic, V ^c  

^a IFN CNR   (Italy)

^b Ist Microelettronica e Microsistemi   (Italy)

^c UNIVERSITÀ POLITECNICA DELLE MARCHE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL MICROSTRUCTURE; ELECTROMAGNETIC FIELD EFFECTS; OPTICAL RESOLVING POWER; SEMICONDUCTING SILICON; STRAIN RATE; STRESS ANALYSIS; WAVEGUIDES; X RAY ANALYSIS;

HIGH ENERGY X RAYS; NANOLITHOGRAPHIC TECHNOLOGIES; SCANNING X RAY MICROSCOPES; SUBMICROMETER RESOLUTION;

NANOTECHNOLOGY;

EID: 1542276766     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1635652     Document Type: Article

References (6)

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