Low Drift Air-Gap CMOS-FET Gas Sensor

Proceedings of IEEE Sensors

Volumn 1, Issue 1, 2002, Pages 421-425

  Paris, R ^a   Pawel, S ^a   Herzer, R ^a   Doll, T ^a   Kornetzky, Peter ^b   Gupta, R P ^c   Eranna, G ^c  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b Inst Microelectron/M S GmbH   (Germany)

^c CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

Author keywords

Drift; Gas Sensor; Work Function

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRODES; GATES (TRANSISTOR); MESFET DEVICES; RESISTORS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; TRANSDUCERS;

DRIFT; FLOATING ELECTRODE; WORK FUNCTION;

CHEMICAL SENSORS;

EID: 1542271640     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. I.Lundström et al., Appl. Phys. Let. 26(2), 55-57, 1975
2. Janata, J., US Patent 4,411,741 1983
3. Doll, T., "Aufbau und Einsatz von hybriden Suspended Gate Feldeffekt-Transistoren (HSGFET),"Thesis, 1995
4. Gergintschew, Z. et al., ITG Fachbericht 126, Berlin, 483-489, 1994
5. Doll, T. et al., "Work Function Gas Sensors Reference Layers and Signal Analysis," Eurosensors XII Proc. 1998
6. Flietner, B. et al., "Reliable hybrid GasFETs for Workfunction Measurements with Arbitrary Materials," Sens. Act. B, 22, 109-113, 1994
7. Witters, J., "Chracteristics and reliability of thin oxid floating gate memory transistors and there supporting programming circuits," Ph.D. Thesis, K.U. Leuven, 1989
8. Aslam-Siddiqi, A.,"Charakterisierung und Anwendung von analogen EEPROMs", Fortschritt-Berichte VDI, 9/298
9. Gergintschew, Z., "Zweidimensionale Simulation, Entwicklung und Optimierung von Gassensoren auf der Basis von Feldeffekttransistoren,"Thesis, 1996
10. Leu, M. et al., "Evaluation of Gas Mixtures with Different Sensitive Layers Incorporated in Hybrid FET Structures," Sens. Act. B, 18-19, 678-681, 1994