A SOI CMOS Hall effect sensor architecture for high temperature applications (up to 300°C)

Proceedings of IEEE Sensors

Volumn 1, Issue 2, 2002, Pages 1401-1406

  Portmann, Lionel ^a   Ballan, Hussein ^b   Declercq, Michel ^a  

^a EPFL   (Switzerland)

^b Eurmicros GmbH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOTIVE INDUSTRY; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; HALL EFFECT; HIGH TEMPERATURE APPLICATIONS; MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY;

VICINITY;

CHEMICAL SENSORS;

EID: 1542271322     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. BILOTTI, A., MONREAL, G., AND VIG, R. Monolithic magnetic Hall sensor using dynamic quadrature offset cancellation. IEEE Journal of Solide-State Circuits 32, 6 (June 1997), 829-836.
2. BLANCHARD, H. Hall Sensors with Integrated Magnetic Flux Concentrators, vol. 5 of Series in Microsystems. Hartung-Gorre, Konstanz, Germany, ISBN: 3-89649-500-3, 1999.
3. DEMEÛS, L., DESSARD, V., VIVIANI, A., ADRIAENSEN, S., AND FLANDRE, D. Integrated sensor and electronic circuits in fully depleted SOI technology for high-temperature applications. IEEE Transactions on Industrial Electronics 48, 2 (April 2001), 272-280.
4. GROESENEKEN, G., COLINGE, J.-P., MAES, H. E., ALDERMAN, J. C., AND HOLT, S. Temperature dependence of threshold voltage in thin-film SOI MOSFET's. IEEE Electron Device Letters 11, 8 (Aug. 1990), 329-331.
5. MELEXIS. Data sheets of the MLX90215 Precision Programmable Linear Hall IC, 2001.
6. POPOVIĆ, R. Hall effect devices. Adam Hilger, 1991.