Comparision of residual stress and optical properties in Ta 2O5 thin films deposited by single and dual ion beam sputtering

Materials Science and Engineering: B

Volumn 118, Issue 1-3, 2005, Pages 234-237

  Yoon, S G ^a   Kim, Y T ^a   Kim, H K ^b   Kim, M J ^b   Lee, H M ^b   Yoon, D H ^a  

^a Sungkyunkwan University   (South Korea)

^b Korea Electronic Technology Institute (KETI)   (South Korea)

Author keywords

Dual ion beam sputtering (DIBS); Residual stress; Single ion beam sputtering (SIBS); Substrate temperature; Ta2O5

Indexed keywords

ADHESION; ION BEAMS; OPTICAL PROPERTIES; RESIDUAL STRESSES; SPUTTERING; STOICHIOMETRY; SUBSTRATES; TANTALUM COMPOUNDS;

DUAL ION BEAM SPUTTERING (DIBS); SINGLE ION BEAM SPUTTERING (SIBS); SUBSTRATE TEMPERATURE; TA2O5;

THIN FILMS;

EID: 15344345589     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.12.055     Document Type: Conference Paper

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