Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 1, 2005, Pages 389-392

  Hamelmann, F ^a   Heinzmann, U ^a   Szekeres, A ^b   Kirov, N ^b   Nikolova, T ^b  

^a BIELEFELD UNIVERSITY   (Germany)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

IR spectroscopy; Optical properties; Silicon oxides; Thin films

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DATA ACQUISITION; INFRARED SPECTROPHOTOMETERS; OPTICAL PROPERTIES; POROSITY; REFRACTIVE INDEX; SILICON COMPOUNDS; SILICON WAFERS;

BRUGGEMAN EFFECTIVE-MEDIUM APPROXIMATION (BEMA) THEORY; DOWNSTREAM PLASMA REACTOR; SILICON OXIDES; VIBRATIONAL SPECTROSCOPY;

THIN FILMS;

EID: 15244338957     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (9)

1. J. J. Perez-Bueno, R. Ramirez-Bon, Y. V. Vorobiev, F. Espinoza-Beltran, J. Gonzales-Hernandez, Thin Solid Films 379, 57 (2000).
2. M. P. Houng, Y. H. Wang, C. J. Huang, S. P. Huang, J. H. Horng, Solid-State Electronics 44, 1917 (2000).
3. K. K Sion, J. Pinel, V. Dolle, L. Pichon, O. Bonnard, Microelectronics Engineering 28, 459 (1995).
4. A. R. Barren "CVD of Insulation Materials" in: CVD of Nonmetals. W.S. Reese (Ed.), VCH Weinheim, 1996, 276.
5. D. M. Back "Fourier transform infrared analysis of thin films" in Physics of Thin Films, Thin Films for Advanced Electronic Devices, Eds. M. H. Francombe, J. L. Vossen, Academic Press, 1991, Vol. 15, pp 265-309 and references therein.
6. D. A. G. Brugemann, Ann. Phys. (Leipzig) 24, 636 (1935).
7. E. D. Palik, editor, "Handbook of Optical Constants of Solids", New York, Academic Press, 1994.
8. L. Laura, T Crowell, J. E. Crowell, L. Logan, J. Vac. Sci. Technol. A, 9, 1002 (1991).
9. H. Rubel, B. Schroder, W. Fuhs, J. Krauskopf, T. Rupp, K. Bethge, phys. stat. sol. (b), 139, 131 (1987).