Gas-assisted etching of niobium with focused ion beam

Microelectronic Engineering

Volumn 78-79, Issue 1-4, 2005, Pages 29-33

  Fu, X L ^a   Li, P G ^a   Jin, A Z ^a   Chen, L M ^a   Yang, H F ^a   Li, L H ^b   Tang, W H ^a   Cui, Z ^c  

^a INSTITUTE OF PHYSICS   (China)

^b UNIVERSITY OF RHODE ISLAND   (United States)

^c RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

Focused ion beam; Gas assisted etching; Niobium

Indexed keywords

ETCHING; FABRICATION; ION BEAMS; IRON; REDUCTION; SCANNING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; XENON;

BEAM DWELLING TIME; FOCUSED ION BEAMS (FIB); GAS ASSISTED ETCHING (GAE); GAS SPECIES;

NIOBIUM;

EID: 14944368698     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.12.089     Document Type: Conference Paper

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